IRS21853SPBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
parameters are absolute voltages referenced to COM.
All voltage
Symbol
V CC
V IN
V B1,2
V S1,2
V HO1,2
dV S /dt
P D
R θ JA
T J
T S
T L
Definition
Low side supply voltage
Logic input voltage (HIN1,2)
High side floating well supply voltage
High side floating well supply return voltage
Floating gate drive output voltage
Allowable V S1,2 offset supply transient relative to COM
Package power dissipation @ T A ≤ +25 oC
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min
-0.3
COM-0.3
-0.3
V B1,2 -20
V S1,2 -0.3
-
-
-
-55
-
Max
20 (Note1)
V CC +0.3
620 (Note1)
V Bn +0.3
V Bn +0.3
50
1.25
100
150
300
Units
V
V/ns
W
oC/W
oC
Note1:
All supplies are fully tested at 25 V. An internal 20 V clamp exists for each supply.
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM. The offset rating are tested with supplies of (V CC -COM)=(V B1,2 -V S1,2 )=15 V.
Symbol
V CC
V IN
V B1,2
V S1,2
V HO1,2
T A
Definition
Low side supply voltage
HIN1, 2 input voltage
High side floating well supply voltage
High side floating well supply offset voltage
Floating gate drive output voltage
Ambient temperature
Min
10
COM
V S1,2 +10
Note 2
V S1,2
-40
Max
20
VCC
V S1,2 +20
600
V B1,2
125
Units
V
oC
Note 2:
Note 3:
V S1,2 and V B1,2 voltages will be tolerant to short negative transient spikes. These will be defined and specified in
the future.
Logic operation for V S of –5 V to 600 V. Logic state held for V S of –5 V to –V BS1,2 . (Please refer to Design Tip
DT97-3 for more details).
3
相关PDF资料
IRS21856SPBF IC DVR LOW SIDE/DUAL HI 14-SOIC
IRS21858SPBF IC DVR LOW SIDE/DUAL HI 16-SOIC
IRS21864STRPBF IC DRIVER HI/LO SIDE 600V 14SOIC
IRS21867SPBF IC MOSFET DRIVER
IRS21952SPBF IC DVR HISIDE DUAL LOSIDE 16SOIC
IRS21953SPBF IC DVR HISIDE DUAL LOSIDE 16SOIC
IRS21956SPBF IC DVR HI SIDE/DUAL LOW 20-SOIC
IRS21962SPBF IC DVR HI SIDE DUAL 600V 16-SOIC
相关代理商/技术参数
IRS21856SPBF 功能描述:功率驱动器IC High Dual Low Side 600V 4.5V 160ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21856STRPBF 功能描述:功率驱动器IC Ramp Slope Cntrl Driver Hi Volt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21858SPBF 功能描述:功率驱动器IC Hig Dual Side DRVR 600V 290mA 160ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21858STRPBF 功能描述:功率驱动器IC Hi&Lw Sd Dual Drvr IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2186 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER
IRS21864PBF 功能描述:功率驱动器IC Hi&Lw Sd Drvr capbl of 4A & 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21864PBF 制造商:International Rectifier 功能描述:MOSFET Driver IC
IRS21864SPbF 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 10 to 20V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube